Information card for entry 7710594

Structure parameters

• Formula: C32 H52 B Br N3 Si
• Calculated formula: C32 H52 B Br N3 Si
• Title of publication: High yield of a variety of silicon-boron radicals and their reactivity
• Authors of publication: Roesky, Herbert W.; Nazish, Mohd; Ding, Yi; Legendre, Christina M.; Kumar, Arun; Graw, Nico; Schwederski, Brigitte; Herbst-Irmer, Regine; P, Parvathy; Parameswaran, Pattiyil; Stalke, Dietmar; Kaim, Wolfgang
• Journal of publication: Dalton Transactions
• Year of publication: 2022
• a: 11.102 ± 0.002 Å
• b: 14.901 ± 0.002 Å
• c: 21.157 ± 0.003 Å
• α: 90°
• β: 102.55 ± 0.02°
• γ: 90°
• Cell volume: 3416.4 ± 0.9 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0418
• Residual factor for significantly intense reflections: 0.0325
• Weighted residual factors for significantly intense reflections: 0.0788
• Weighted residual factors for all reflections included in the refinement: 0.083
• Goodness-of-fit parameter for all reflections included in the refinement: 1.045
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No