Information card for entry 7710596

Structure parameters

• Formula: C41 H65 Br N4 Se Si
• Calculated formula: C41 H65 Br N4 Se Si
• Title of publication: High yield of a variety of silicon-boron radicals and their reactivity
• Authors of publication: Roesky, Herbert W.; Nazish, Mohd; Ding, Yi; Legendre, Christina M.; Kumar, Arun; Graw, Nico; Schwederski, Brigitte; Herbst-Irmer, Regine; P, Parvathy; Parameswaran, Pattiyil; Stalke, Dietmar; Kaim, Wolfgang
• Journal of publication: Dalton Transactions
• Year of publication: 2022
• a: 30.532 ± 0.003 Å
• b: 8.76 ± 0.002 Å
• c: 18.768 ± 0.002 Å
• α: 90°
• β: 122.67 ± 0.02°
• γ: 90°
• Cell volume: 4225.5 ± 1.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0298
• Residual factor for significantly intense reflections: 0.0234
• Weighted residual factors for significantly intense reflections: 0.0522
• Weighted residual factors for all reflections included in the refinement: 0.0544
• Goodness-of-fit parameter for all reflections included in the refinement: 1.04
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No