Information card for entry 7711100

Structure parameters

• Common name: [Sn(Et-tBu-AMD)2]
• Chemical name: [Sn(Et-tBu-AMD)2]
• Formula: C16 H34 N4 Sn
• Calculated formula: C16 H34 N4 Sn
• SMILES: [Sn]12([N](=C(N1C(C)(C)C)C)CC)[N](=C(N2CC)C)C(C)(C)C
• Title of publication: SnO via Water Based ALD employing Tin(II) Formamidinate: Precursor Characterization and Process Development
• Authors of publication: Huster, Niklas; Ghiyasi, Ramin; Zanders, David; Rogalla, Detlef; Karppinen, Maarit; Devi, Anjana
• Journal of publication: Dalton Transactions
• Year of publication: 2022
• a: 10.3446 ± 0.0003 Å
• b: 10.154 ± 0.0003 Å
• c: 19.4816 ± 0.0007 Å
• α: 90°
• β: 103.756 ± 0.003°
• γ: 90°
• Cell volume: 1987.63 ± 0.11 ų
• Cell temperature: 99.97 ± 0.18 K
• Ambient diffraction temperature: 99.97 ± 0.18 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.059
• Residual factor for significantly intense reflections: 0.0499
• Weighted residual factors for significantly intense reflections: 0.1315
• Weighted residual factors for all reflections included in the refinement: 0.1415
• Goodness-of-fit parameter for all reflections included in the refinement: 1.064
• Diffraction radiation probe: x-ray
• Diffraction radiation wavelength: 1.54184 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No