Information card for entry 7716218

Structure parameters

• Formula: C56 H84 N4 O Si5 Te2
• Calculated formula: C56 H84 N4 O Si5 Te2
• SMILES: [Te]=[Si]1([Si]2(C([Si](C)(C)C)=C(C(=C2[Si](C)(C)C)c2ccccc2)c2ccccc2)[Si]2(=[Te])[N](=C(N2C(C)(C)C)c2ccccc2)C(C)(C)C)[N](=C(N1C(C)(C)C)c1ccccc1)C(C)(C)C.O(CC)CC
• Title of publication: A Bis(silylene)silole - synthesis, properties and reactivity.
• Authors of publication: Liu, Chenghuan; Schmidtmann, Marc; Müller, Thomas
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2024
• Journal volume: 53
• Journal issue: 25
• Pages of publication: 10446 - 10452
• a: 13.3105 ± 0.0006 Å
• b: 15.4573 ± 0.0006 Å
• c: 30.3266 ± 0.0012 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 6239.5 ± 0.4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 19
• Hermann-Mauguin space group symbol: P 21 21 21
• Hall space group symbol: P 2ac 2ab
• Residual factor for all reflections: 0.0281
• Residual factor for significantly intense reflections: 0.0269
• Weighted residual factors for significantly intense reflections: 0.0653
• Weighted residual factors for all reflections included in the refinement: 0.066
• Goodness-of-fit parameter for all reflections included in the refinement: 1.056
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No