Information card for entry 7716230

Structure parameters

• Formula: C24 H50 Ge N2 S Si4
• Calculated formula: C24 H50 Ge N2 S Si4
• SMILES: [Ge]1(=S)([Si]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)[N](=C(N1C(C)(C)C)c1ccccc1)C(C)(C)C
• Title of publication: Activation of carbon disulfide by a hypersilyl germylene.
• Authors of publication: Ajithkumar, V. S.; Khilari, Nripen; Ghanwat, Pratiksha B.; Venugopal, Geethu; Koley, Debasis; Sen, Sakya S.
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2024
• Journal volume: 53
• Journal issue: 26
• Pages of publication: 10814 - 10818
• a: 21.115 ± 0.002 Å
• b: 9.603 ± 0.0011 Å
• c: 16.2157 ± 0.0019 Å
• α: 90°
• β: 93.596 ± 0.004°
• γ: 90°
• Cell volume: 3281.5 ± 0.6 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 7
• Hermann-Mauguin space group symbol: P 1 c 1
• Hall space group symbol: P -2yc
• Residual factor for all reflections: 0.0552
• Residual factor for significantly intense reflections: 0.0404
• Weighted residual factors for significantly intense reflections: 0.0869
• Weighted residual factors for all reflections included in the refinement: 0.0934
• Goodness-of-fit parameter for all reflections included in the refinement: 1.042
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No