Information card for entry 7719308

Structure parameters

• Formula: Ba2.75 Pb1.16 Sb4.09 Se10
• Calculated formula: Ba2.75 Pb1.151 Sb4.099 Se10
• Title of publication: Semiconductor-to-semimetal transition on Te doping in a new semiconducting material Ba_2.75Pb_1.1Sb_4.1Se₁₀.
• Authors of publication: Swati, ?; Jana, Subhendu; Barman, Sayani; Yadav, Sweta; Prakash, Jai
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2025
• Journal volume: 54
• Journal issue: 36
• Pages of publication: 13459 - 13471
• a: 9.173 ± 0.0007 Å
• b: 8.5365 ± 0.0007 Å
• c: 27.741 ± 0.003 Å
• α: 90°
• β: 99.797 ± 0.003°
• γ: 90°
• Cell volume: 2140.6 ± 0.3 ų
• Cell temperature: 298 ± 2 K
• Ambient diffraction temperature: 298 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0507
• Residual factor for significantly intense reflections: 0.0385
• Weighted residual factors for significantly intense reflections: 0.0775
• Weighted residual factors for all reflections included in the refinement: 0.0817
• Goodness-of-fit parameter for all reflections included in the refinement: 1.084
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No