Information card for entry 7720774

Structure parameters

• Formula: In0.56 Sb1.19 Se3 Sn0.38
• Calculated formula: In0.5625 Sb1.1875 Se3 Sn0.375
• Title of publication: Synthesis, crystal chemistry, and semiconducting properties of A₃B₁₄Se₂₄ (A = Sn/Pb; B = In/Sb/Bi) with step-layered NaCl(111)-type slabs interleaved with NaCl(100)-type ribbons.
• Authors of publication: Chen, Guan-Ruei; Xiao, Wan-Zhen; Huang, Yen-Han; Yang, Chia-Wei; Lee, Chi-Shen
• Journal of publication: Dalton transactions (Cambridge, England : 2003)
• Year of publication: 2026
• Journal volume: 55
• Journal issue: 17
• Pages of publication: 6825 - 6834
• a: 34.018 ± 0.013 Å
• b: 3.9745 ± 0.0012 Å
• c: 16.823 ± 0.006 Å
• α: 90°
• β: 109.877 ± 0.01°
• γ: 90°
• Cell volume: 2139 ± 1.3 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 4
• Space group number: 12
• Hermann-Mauguin space group symbol: C 1 2/m 1
• Hall space group symbol: -C 2y
• Residual factor for all reflections: 0.0938
• Residual factor for significantly intense reflections: 0.0573
• Weighted residual factors for significantly intense reflections: 0.1265
• Weighted residual factors for all reflections included in the refinement: 0.1464
• Goodness-of-fit parameter for all reflections included in the refinement: 1.016
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No