Information card for entry 8101666

Structure parameters

• Formula: C32 H58 Co O2 S2 Si4
• Calculated formula: C32 H58 Co O2 S2 Si4
• SMILES: [Co](Sc1c([Si](C)(C)C)cccc1[Si](C)(C)C)(Sc1c([Si](C)(C)C)cccc1[Si](C)(C)C)([O]1CCCC1)[O]1CCCC1
• Title of publication: Crystal structure of ditetrahydrofuranecobalt(II) 2,6-bis(trimethylsilyl) thiophenolate, C~32~H~58~O~2~Si~4~S~2~Co
• Authors of publication: Hauptmann, Ralf; Schneider, Jörg; Henkel, Gerald
• Journal of publication: Zeitschrift für Kristallographie - New Crystal Structures
• Year of publication: 1998
• Journal volume: 213
• Journal issue: 4
• Pages of publication: 783 - 784
• a: 31.057 ± 0.01 Å
• b: 14.132 ± 0.005 Å
• c: 17.794 ± 0.007 Å
• α: 90°
• β: 92.74 ± 0.03°
• γ: 90°
• Cell volume: 7800.81 ų
• Cell temperature: 150 K
• Ambient diffraction temperature: 150 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for significantly intense reflections: 0.0871
• Weighted residual factors for significantly intense reflections: 0.1283
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No