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Information card for entry 8106471
Preview
| Coordinates | 8106471.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C32 H20 O2 S2 |
|---|---|
| Calculated formula | C32 H20 O2 S2 |
| SMILES | s1c(c(c2c(c(sc12)C(=O)c1ccccc1)c1ccccc1)c1ccccc1)C(=O)c1ccccc1 |
| Title of publication | Crystal structure of 1,1′-(3,4-diphenylthieno[2,3-b]thiophene-2,5-diyl)bis[1-phenyl-methanone], C32H20O2S2 |
| Authors of publication | Altamimi, Rashid; Ghabbour, Hazem A.; Aldawsari, Fahad; AlRuqi, Obaid S.; Alqahtani, Nasser |
| Journal of publication | Zeitschrift für Kristallographie - New Crystal Structures |
| Year of publication | 2017 |
| Journal volume | 232 |
| Journal issue | 2 |
| Pages of publication | 167 - 169 |
| a | 10.2763 ± 0.0008 Å |
| b | 19.9178 ± 0.0015 Å |
| c | 11.8597 ± 0.001 Å |
| α | 90° |
| β | 92.828 ± 0.003° |
| γ | 90° |
| Cell volume | 2424.5 ± 0.3 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/c 1 |
| Hall space group symbol | -P 2ybc |
| Residual factor for all reflections | 0.1225 |
| Residual factor for significantly intense reflections | 0.0689 |
| Weighted residual factors for significantly intense reflections | 0.1588 |
| Weighted residual factors for all reflections included in the refinement | 0.1782 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.043 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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