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Information card for entry 1505458
Preview
Coordinates | 1505458.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C52 H62 Si2 |
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Calculated formula | C52 H62 Si2 |
SMILES | [Si](C#Cc1c2cc(ccc2c(c2cc(ccc12)/C=C/c1ccccc1)C#C[Si](C(C)C)(C(C)C)C(C)C)/C=C/c1ccccc1)(C(C)C)(C(C)C)C(C)C |
Title of publication | Soluble and easily crystallized anthracene derivatives: precursors of solution-processable semiconducting molecules. |
Authors of publication | Park, Jong-Hwa; Chung, Dae Sung; Park, Jong-Won; Ahn, Taek; Kong, Hoyoul; Jung, Young Kwan; Lee, Jonghee; Yi, Mi Hye; Park, Chan Eon; Kwon, Soon-Ki; Shim, Hong-Ku |
Journal of publication | Organic letters |
Year of publication | 2007 |
Journal volume | 9 |
Journal issue | 13 |
Pages of publication | 2573 - 2576 |
a | 8.4979 ± 0.0001 Å |
b | 11.3921 ± 0.0002 Å |
c | 12.3339 ± 0.0002 Å |
α | 76.88 ± 0.001° |
β | 81.092 ± 0.001° |
γ | 82.806 ± 0.001° |
Cell volume | 1143.79 ± 0.03 Å3 |
Cell temperature | 296 ± 2 K |
Ambient diffraction temperature | 296 ± 2 K |
Number of distinct elements | 3 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.0768 |
Residual factor for significantly intense reflections | 0.0479 |
Weighted residual factors for significantly intense reflections | 0.1242 |
Weighted residual factors for all reflections included in the refinement | 0.1403 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.055 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/1505458.html
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