Information card for entry 1506640

Structure parameters

• Formula: C38 H34 S4 Si2
• Calculated formula: C38 H34 S4 Si2
• SMILES: c1(c(cc(c2cc3c(cc4c(c3)cccc4)s2)s1)[Si](C)(C)C)c1c(cc(c2cc3c(cc4ccccc4c3)s2)s1)[Si](C)(C)C
• Title of publication: Synthesis of a thermally stable hybrid acene-thiophene organic semiconductor via a soluble precursor.
• Authors of publication: Nicolas, Yohann; Blanchard, Philippe; Roncali, Jean; Allain, Magali; Mercier, Nicolas; Deman, Anne-Laure; Tardy, Jacques
• Journal of publication: Organic letters
• Year of publication: 2005
• Journal volume: 7
• Journal issue: 16
• Pages of publication: 3513 - 3516
• a: 9.873 ± 0.001 Å
• b: 12.734 ± 0.001 Å
• c: 13.85 ± 0.002 Å
• α: 88.64 ± 0.01°
• β: 89.51 ± 0.01°
• γ: 86.93 ± 0.01°
• Cell volume: 1738.2 ± 0.3 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1073
• Residual factor for significantly intense reflections: 0.0393
• Weighted residual factors for significantly intense reflections: 0.0731
• Weighted residual factors for all reflections included in the refinement: 0.0911
• Goodness-of-fit parameter for all reflections included in the refinement: 0.863
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No