Information card for entry 1508416

Structure parameters

• Formula: Ba In0.2 Sn2.8
• Calculated formula: Ba In0.21 Sn2.79
• Title of publication: Indium Doping in BaSn3-x Inx (0 <= x <= 0.2) with Ni3Sn Structure
• Authors of publication: Schαfer, Marion C.; Yamasaki, Yuki; Fritsch, Veronika; Bobev, Svilen
• Journal of publication: Crystals
• Year of publication: 2012
• Journal volume: 1
• Journal issue: 3
• Pages of publication: 104 - 111
• a: 7.2604 ± 0.0013 Å
• b: 7.2604 ± 0.0013 Å
• c: 5.382 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 245.69 ± 0.11 ų
• Cell temperature: 120 ± 2 K
• Ambient diffraction temperature: 120 ± 2 K
• Number of distinct elements: 3
• Space group number: 194
• Hermann-Mauguin space group symbol: P 63/m m c
• Hall space group symbol: -P 6c 2c
• Residual factor for all reflections: 0.0207
• Residual factor for significantly intense reflections: 0.0207
• Weighted residual factors for significantly intense reflections: 0.041
• Weighted residual factors for all reflections included in the refinement: 0.041
• Goodness-of-fit parameter for all reflections included in the refinement: 1.295
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No