Information card for entry 1508443

Structure parameters

• Formula: As6 Ga3 Na8 Rb
• Calculated formula: As6 Ga3 Na8 Rb
• SMILES: [Rb+].[As-2][Ga]1[As-][Ga]([As-][Ga]([As-]1)[As-2])[As-2].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+]
• Title of publication: Synthesis and Crystal Structures of the Quaternary Zintl Phases RbNa8Ga3Pn6 (Pn = P, As) and Na10NbGaAs6
• Authors of publication: He, Hua; Tyson,Chauntae; Bobev, Svilen
• Journal of publication: Crystals
• Year of publication: 2012
• Journal volume: 2
• Journal issue: 2
• Pages of publication: 213 - 223
• a: 22.843 ± 0.006 Å
• b: 4.7892 ± 0.0012 Å
• c: 16.861 ± 0.004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1844.6 ± 0.8 ų
• Cell temperature: 200 ± 2 K
• Ambient diffraction temperature: 200 ± 2 K
• Number of distinct elements: 4
• Space group number: 62
• Hermann-Mauguin space group symbol: P n m a
• Hall space group symbol: -P 2ac 2n
• Residual factor for all reflections: 0.0619
• Residual factor for significantly intense reflections: 0.0326
• Weighted residual factors for significantly intense reflections: 0.0521
• Weighted residual factors for all reflections included in the refinement: 0.0611
• Goodness-of-fit parameter for all reflections included in the refinement: 1.031
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No