Information card for entry 1513614
| Formula |
C30 H45 N6 Na O Si3 U |
| Calculated formula |
C30 H45 N6 Na O Si3 U |
| SMILES |
[U]12345([N]6(CC[N]1(CCN2CC6)[Si](N4c1ccccc1)(C)C)[Si](N3c1ccccc1)(C)C)O[Si](N5c1ccccc1)(C)C.[Na+] |
| Title of publication |
Two-electron versus one-electron reduction of chalcogens by uranium(iii): synthesis of a terminal U(v) persulfide complex |
| Authors of publication |
Camp, Clément; Antunes, Maria Augusta; García, Gregorio; Ciofini, Ilaria; Santos, Isabel C.; Pécaut, Jacques; Almeida, Manuel; Marçalo, Joaquim; Mazzanti, Marinella |
| Journal of publication |
Chemical Science |
| Year of publication |
2014 |
| Journal volume |
5 |
| Journal issue |
2 |
| Pages of publication |
841 |
| a |
10.5247 ± 0.0003 Å |
| b |
18.506 ± 0.0005 Å |
| c |
17.3041 ± 0.0006 Å |
| α |
90° |
| β |
91.612 ± 0.003° |
| γ |
90° |
| Cell volume |
3368.99 ± 0.18 Å3 |
| Cell temperature |
150 ± 2 K |
| Ambient diffraction temperature |
150 ± 2 K |
| Number of distinct elements |
7 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.0959 |
| Residual factor for significantly intense reflections |
0.0496 |
| Weighted residual factors for significantly intense reflections |
0.0799 |
| Weighted residual factors for all reflections included in the refinement |
0.0925 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.016 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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