Information card for entry 1518528

Structure parameters

• Formula: C30 H40 N2 O4 Si4
• Calculated formula: C30 H40 N2 O4 Si4
• SMILES: COC(=O)C(=C\c1ccc(cc1)[Si](C)(C)[Si](C)(C)[Si](C)(C)[Si](C)(C)c1ccc(cc1)/C=C(C#N)/C(=O)OC)\C#N
• Title of publication: Increased carrier mobility in end-functionalized oligosilanes
• Authors of publication: Surampudi, S.; Yeh, M.-L.; Siegler, M. A.; Hardigree, J. F. Martinez; Kasl, T. A.; Katz, H. E.; Klausen, R. S.
• Journal of publication: Chem. Sci.
• Year of publication: 2015
• Journal volume: 6
• Journal issue: 3
• Pages of publication: 1905
• a: 8.5558 ± 0.0005 Å
• b: 11.887 ± 0.0004 Å
• c: 17.0071 ± 0.0008 Å
• α: 99.115 ± 0.003°
• β: 92.129 ± 0.004°
• γ: 94.397 ± 0.004°
• Cell volume: 1700.67 ± 0.14 ų
• Cell temperature: 110 ± 2 K
• Ambient diffraction temperature: 110 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0889
• Residual factor for significantly intense reflections: 0.0629
• Weighted residual factors for significantly intense reflections: 0.1706
• Weighted residual factors for all reflections included in the refinement: 0.1941
• Goodness-of-fit parameter for all reflections included in the refinement: 1.026
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No