Information card for entry 1519465

Structure parameters

• Formula: C32 H48 O8 Si8
• Calculated formula: C32 H48 O8 Si8
• SMILES: [Si]1(O[Si](O[Si](O[Si](O1)(O[SiH](C)C)c1ccccc1)(O[SiH](C)C)c1ccccc1)(O[SiH](C)C)c1ccccc1)(O[SiH](C)C)c1ccccc1
• Title of publication: C32H48O8Si8
• Authors of publication: Taylor, Peter G.; Horton, Peter N.; Hursthouse, Michael B.
• Journal of publication: Crystal Structure Report Archive
• Year of publication: 2002
• Pages of publication: 937
• a: 10.6038 ± 0.0012 Å
• b: 11.3298 ± 0.0014 Å
• c: 19.444 ± 0.003 Å
• α: 86.132 ± 0.005°
• β: 81.457 ± 0.005°
• γ: 68.06 ± 0.012°
• Cell volume: 2142.6 ± 0.5 ų
• Cell temperature: 120 ± 2 K
• Ambient diffraction temperature: 120 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1995
• Residual factor for significantly intense reflections: 0.0751
• Weighted residual factors for significantly intense reflections: 0.1505
• Weighted residual factors for all reflections included in the refinement: 0.1901
• Goodness-of-fit parameter for all reflections included in the refinement: 1
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No