Information card for entry 1520115

Structure parameters

• Formula: C42 H48 Ge3 Si2
• Calculated formula: C42 H48 Ge3 Si2
• SMILES: [Ge]([Ge](c1ccccc1)(c1ccccc1)c1ccccc1)([Ge](c1ccccc1)(c1ccccc1)c1ccccc1)([Si](C)(C)C)[Si](C)(C)C
• Title of publication: Compounds of Group 14 Elements with an Element‒Element (E = Si, Ge, Sn) Bond: Effect of the Nature of the Element Atom
• Authors of publication: Zaitsev, Kirill V.; Lermontova, Elmira Kh.; Churakov, Andrei V.; Tafeenko, Viktor A.; Tarasevich, Boris N.; Poleshchuk, Oleg Kh.; Kharcheva, Anastasia V.; Magdesieva, Tatiana V.; Nikitin, Oleg M.; Zaitseva, Galina S.; Karlov, Sergey S.
• Journal of publication: Organometallics
• Year of publication: 2015
• Journal volume: 34
• Journal issue: 12
• Pages of publication: 2765
• a: 11.0225 ± 0.0003 Å
• b: 21.7372 ± 0.0006 Å
• c: 16.6855 ± 0.0005 Å
• α: 90°
• β: 92.4892 ± 0.0004°
• γ: 90°
• Cell volume: 3994 ± 0.2 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0371
• Residual factor for significantly intense reflections: 0.0272
• Weighted residual factors for significantly intense reflections: 0.0618
• Weighted residual factors for all reflections included in the refinement: 0.065
• Goodness-of-fit parameter for all reflections included in the refinement: 1.028
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No