Information card for entry 1520359

Structure parameters

• Formula: C56 H92 F N O28 Si8
• Calculated formula: C56 H92 F N O28 Si8
• Title of publication: C56H92FNO28Si8
• Authors of publication: Taylor, Peter G.; Horton, Peter N.; Hursthouse, Michael B.; Stephenson, Richard
• Journal of publication: Crystal Structure Report Archive
• Year of publication: 2009
• Pages of publication: 1245
• a: 10.2479 ± 0.0003 Å
• b: 12.5527 ± 0.0004 Å
• c: 15.9489 ± 0.0005 Å
• α: 105.062 ± 0.002°
• β: 106.841 ± 0.002°
• γ: 101.499 ± 0.002°
• Cell volume: 1810.55 ± 0.11 ų
• Cell temperature: 120 ± 2 K
• Ambient diffraction temperature: 120 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0706
• Residual factor for significantly intense reflections: 0.0455
• Weighted residual factors for significantly intense reflections: 0.1089
• Weighted residual factors for all reflections included in the refinement: 0.1206
• Goodness-of-fit parameter for all reflections included in the refinement: 1.046
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No