Crystallography Open Database

Information card for entry 1520546

1520545 << 1520546 >> 1520547

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Coordinates	1520546.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	S3 Ti
Calculated formula	S3 Ti
Title of publication	Few-layered titanium trisulfide (TiS3) field-effect transistors.
Authors of publication	Lipatov, Alexey; Wilson, Peter M.; Shekhirev, Mikhail; Teeter, Jacob D.; Netusil, Ross; Sinitskii, Alexander
Journal of publication	Nanoscale
Year of publication	2015
Journal volume	7
Journal issue	29
Pages of publication	12291 - 12296
a	4.9476 Å
b	3.3787 Å
c	8.7479 Å
α	90°
β	97.617°
γ	90°
Cell volume	144.944 Å³
Cell temperature	293 K
Ambient diffraction temperature	293 K
Number of distinct elements	2
Space group number	11
Hermann-Mauguin space group symbol	P 1 21/m 1
Hall space group symbol	-P 2yb
Residual factor for all reflections	0.1771
Residual factor for significantly intense reflections	0.1252
Weighted residual factors for significantly intense reflections	0.1463
Weighted residual factors for all reflections included in the refinement	0.1545
Goodness-of-fit parameter for significantly intense reflections	2.56
Goodness-of-fit parameter for all reflections included in the refinement	2.13
Diffraction radiation probe	x-ray
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

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