Information card for entry 1535065
| Chemical name |
In As |
| Formula |
As In |
| Calculated formula |
As In |
| Title of publication |
Structural and electronic properties of narrow-band-gap semiconductors: In P, In As, and In Sb |
| Authors of publication |
Massidda, S.; Continenza, A.; Freeman, A.J.; de Pascale, T.M.; Meloni, F.; Serra, M. |
| Journal of publication |
Physical Review, Serie 3. B - Condensed Matter (18,1978-) |
| Year of publication |
1990 |
| Journal volume |
41 |
| Pages of publication |
12079 - 12085 |
| a |
6.058 Å |
| b |
6.058 Å |
| c |
6.058 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
222.325 Å3 |
| Number of distinct elements |
2 |
| Space group number |
216 |
| Hermann-Mauguin space group symbol |
F -4 3 m |
| Hall space group symbol |
F -4 2 3 |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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