Information card for entry 1535065
Chemical name |
In As |
Formula |
As In |
Calculated formula |
As In |
Title of publication |
Structural and electronic properties of narrow-band-gap semiconductors: In P, In As, and In Sb |
Authors of publication |
Massidda, S.; Continenza, A.; Freeman, A.J.; de Pascale, T.M.; Meloni, F.; Serra, M. |
Journal of publication |
Physical Review, Serie 3. B - Condensed Matter (18,1978-) |
Year of publication |
1990 |
Journal volume |
41 |
Pages of publication |
12079 - 12085 |
a |
6.058 Å |
b |
6.058 Å |
c |
6.058 Å |
α |
90° |
β |
90° |
γ |
90° |
Cell volume |
222.325 Å3 |
Number of distinct elements |
2 |
Space group number |
216 |
Hermann-Mauguin space group symbol |
F -4 3 m |
Hall space group symbol |
F -4 2 3 |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
No |
For the version history of this entry, please navigate to main COD server.
The link is:
https://www.crystallography.net/1535065.html