Information card for entry 1540503

Structure parameters

• Common name: Barium gallium arsenide (3/1/3)
• Chemical name: Barium gallium arsenide (3/1/3)
• Formula: As3 Ba3 Ga
• Calculated formula: As3 Ba3 Ga
• Title of publication: Synthesis, Crystal and Electronic Structures of the Pnictides AE3TrPn3 (AE = Sr, Ba; Tr = Al, Ga; Pn = P, As)
• Authors of publication: Stoyko, Stanislav; Voss, Leonard; He, Hua; Bobev, Svilen
• Journal of publication: Crystals
• Year of publication: 2015
• Journal volume: 5
• Journal issue: 4
• Pages of publication: 433
• a: 13.3589 ± 0.001 Å
• b: 19.9788 ± 0.0015 Å
• c: 6.8008 ± 0.0005 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1815.1 ± 0.2 ų
• Cell temperature: 200 ± 2 K
• Ambient diffraction temperature: 200 ± 2 K
• Number of distinct elements: 3
• Space group number: 62
• Hermann-Mauguin space group symbol: P n m a
• Hall space group symbol: -P 2ac 2n
• Residual factor for all reflections: 0.0205
• Residual factor for significantly intense reflections: 0.0159
• Weighted residual factors for significantly intense reflections: 0.0296
• Weighted residual factors for all reflections included in the refinement: 0.0314
• Goodness-of-fit parameter for all reflections included in the refinement: 1.114
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No