Information card for entry 1542864

Structure parameters

• Formula: C27 H42 Ge Si4
• Calculated formula: C27 H42 Ge Si4
• SMILES: [Ge]([Si](c1ccccc1)(c1ccccc1)c1ccccc1)([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C
• Title of publication: σ-Bond electron delocalization of branched oligogermanes and germanium containing oligosilanes
• Authors of publication: Hlina, Johann; Zitz, Rainer; Wagner, Harald; Stella, Filippo; Baumgartner, Judith; Marschner, Christoph
• Journal of publication: Inorganica Chimica Acta
• Year of publication: 2014
• Journal volume: 422
• Pages of publication: 120 - 133
• a: 16.881 ± 0.003 Å
• b: 9.822 ± 0.002 Å
• c: 36.65 ± 0.007 Å
• α: 90°
• β: 91.48 ± 0.03°
• γ: 90°
• Cell volume: 6075 ± 2 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0492
• Residual factor for significantly intense reflections: 0.0445
• Weighted residual factors for significantly intense reflections: 0.097
• Weighted residual factors for all reflections included in the refinement: 0.0995
• Goodness-of-fit parameter for all reflections included in the refinement: 1.145
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No