Information card for entry 1542871

Structure parameters

• Formula: C30 H90 Ge8 Si6
• Calculated formula: C30 H90 Ge8 Si6
• SMILES: [Ge]([Ge](C)(C)C)([Ge](C)(C)C)([Ge](C)(C)C)[Si]([Si]([Si]([Si]([Si]([Si]([Ge]([Ge](C)(C)C)([Ge](C)(C)C)[Ge](C)(C)C)(C)C)(C)C)(C)C)(C)C)(C)C)(C)C
• Title of publication: σ-Bond electron delocalization of branched oligogermanes and germanium containing oligosilanes
• Authors of publication: Hlina, Johann; Zitz, Rainer; Wagner, Harald; Stella, Filippo; Baumgartner, Judith; Marschner, Christoph
• Journal of publication: Inorganica Chimica Acta
• Year of publication: 2014
• Journal volume: 422
• Pages of publication: 120 - 133
• a: 14.566 ± 0.003 Å
• b: 9.7242 ± 0.0019 Å
• c: 41.632 ± 0.008 Å
• α: 90°
• β: 94.27 ± 0.03°
• γ: 90°
• Cell volume: 5881 ± 2 ų
• Cell temperature: 136 ± 2 K
• Ambient diffraction temperature: 136 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1267
• Residual factor for significantly intense reflections: 0.0962
• Weighted residual factors for significantly intense reflections: 0.1439
• Weighted residual factors for all reflections included in the refinement: 0.1697
• Goodness-of-fit parameter for all reflections included in the refinement: 1.087
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No