Information card for entry 1542873

Structure parameters

• Formula: C18 H54 Ge2 Si7
• Calculated formula: C18 H54 Ge2 Si7
• SMILES: [Ge]1([Si]([Ge]([Si]([Si]1(C)C)(C)C)([Si](C)(C)C)[Si](C)(C)C)(C)C)([Si](C)(C)C)[Si](C)(C)C
• Title of publication: σ-Bond electron delocalization of branched oligogermanes and germanium containing oligosilanes
• Authors of publication: Hlina, Johann; Zitz, Rainer; Wagner, Harald; Stella, Filippo; Baumgartner, Judith; Marschner, Christoph
• Journal of publication: Inorganica Chimica Acta
• Year of publication: 2014
• Journal volume: 422
• Pages of publication: 120 - 133
• a: 9.2278 ± 0.0018 Å
• b: 32.901 ± 0.007 Å
• c: 12.868 ± 0.005 Å
• α: 90°
• β: 117.97 ± 0.02°
• γ: 90°
• Cell volume: 3450.4 ± 1.8 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.1303
• Residual factor for significantly intense reflections: 0.1158
• Weighted residual factors for significantly intense reflections: 0.2361
• Weighted residual factors for all reflections included in the refinement: 0.2435
• Goodness-of-fit parameter for all reflections included in the refinement: 1.217
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No