Information card for entry 1558725

Structure parameters

• Common name: Ba3TaGa3Si2O14
• Formula: Ba3 Ga3 O14 Si2 Ta
• Calculated formula: Ba3 Ga3 O14 Si2 Ta
• Title of publication: Structure and electrical properties of Ba3TaGa3Si2O14 single crystals grown by Czochralski method
• Authors of publication: Usui, H.; Kusakabe, H.; Tokuda, M.; Sugiyama, K.; Hoshina, T.; Tsurumi, T.; Takeda, H.
• Journal of publication: Journal of the Ceramic Society of Japan
• Year of publication: 2020
• Journal volume: 128
• Pages of publication: 441 - 446
• a: 8.515 ± 0.002 Å
• b: 8.515 ± 0.002 Å
• c: 5.192 ± 0.001 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 326.01 ± 0.13 ų
• Ambient diffraction temperature: 298 K
• Ambient diffracton pressure: 100 kPa
• Number of distinct elements: 5
• Space group number: 150
• Hermann-Mauguin space group symbol: P 3 2 1
• Hall space group symbol: P 3 2"
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No