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Information card for entry 1559384
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Coordinates | 1559384.cif |
---|---|
Original paper (by DOI) | HTML |
Chemical name | 3-octyl-BTNT |
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Formula | C26 H26 S2 |
Calculated formula | C26 H26 S2 |
SMILES | s1c2c3cc(ccc3sc2c2c1cc1ccccc1c2)CCCCCCCC |
Title of publication | Regioisomeric Control of Layered Crystallinity in Solution-Processable Organic Semiconductors |
Authors of publication | Inoue, Satoru; Higashino, Toshiki; Arai, Shunto; Kumai, Reiji; MATSUI, Hiroyuki; Tsuzuki, Seiji; Horiuchi, Sachio; Hasegawa, Tatsuo |
Journal of publication | Chemical Science |
Year of publication | 2020 |
a | 6.0576 ± 0.0003 Å |
b | 8.0009 ± 0.0004 Å |
c | 44.519 ± 0.003 Å |
α | 87.629 ± 0.005° |
β | 88.944 ± 0.004° |
γ | 89.75 ± 0.004° |
Cell volume | 2155.4 ± 0.2 Å3 |
Cell temperature | 296 K |
Ambient diffraction temperature | 296 K |
Number of distinct elements | 3 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.233 |
Residual factor for significantly intense reflections | 0.1215 |
Weighted residual factors for significantly intense reflections | 0.3241 |
Weighted residual factors for all reflections included in the refinement | 0.3749 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.048 |
Diffraction radiation wavelength | 0.71075 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/1559384.html
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Users of the data should acknowledge the original authors of the
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