Information card for entry 1561524

Structure parameters

• Formula: Cs Ge In S4
• Calculated formula: Cs Ge In S4
• Title of publication: Syntheses, structural variants and characterization of AInM′S4 (A=alkali metals, Tl; M′ = Ge, Sn) compounds; facile ion-exchange reactions of layered NaInSnS4 and KInSnS4 compounds
• Authors of publication: Yohannan, Jinu P.; Vidyasagar, Kanamaluru
• Journal of publication: Journal of Solid State Chemistry
• Year of publication: 2016
• Journal volume: 238
• Pages of publication: 291 - 302
• a: 13.3832 ± 0.0004 Å
• b: 13.3832 ± 0.0004 Å
• c: 13.3832 ± 0.0004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 2397.07 ± 0.12 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 4
• Space group number: 205
• Hermann-Mauguin space group symbol: P a -3
• Hall space group symbol: -P 2ac 2ab 3
• Residual factor for all reflections: 0.0506
• Residual factor for significantly intense reflections: 0.0405
• Weighted residual factors for significantly intense reflections: 0.0677
• Weighted residual factors for all reflections included in the refinement: 0.0706
• Goodness-of-fit parameter for all reflections included in the refinement: 1.152
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No