Information card for entry 1562113

Structure parameters

• Formula: Ag Ga O2
• Calculated formula: Ag Ga O2
• Title of publication: Structure of β-AgGaO2; ternary I‒III‒VI2 oxide semiconductor with a wurtzite-derived structure
• Authors of publication: Nagatani, Hiraku; Suzuki, Issei; Kita, Masao; Tanaka, Masahiko; Katsuya, Yoshio; Sakata, Osami; Omata, Takahisa
• Journal of publication: Journal of Solid State Chemistry
• Year of publication: 2015
• Journal volume: 222
• Pages of publication: 66 - 70
• a: 5.56175 ± 0.00001 Å
• b: 7.14749 ± 0.00001 Å
• c: 5.46875 ± 0.00001 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 217.397 ± 0.0006 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 3
• Space group number: 33
• Hermann-Mauguin space group symbol: P n a 21
• Hall space group symbol: P 2c -2n
• Diffraction radiation wavelength: 0.65273 Å
• Diffraction radiation type: synchrotronradiation
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No