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Information card for entry 1563141
Preview
Coordinates | 1563141.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C50 H100 K N5 O6 Si6 U |
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Calculated formula | C50 H100 K N5 O6 Si6 U |
SMILES | [U]1(N([Si](C)(C)C)[Si](C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)[C](#[C]1c1ccccc1)c1ccccc1.[K]1234567[O]8CC[N]96CC[O]3CC[O]2CC[N]7(CC[O]1CC8)CC[O]5CC[O]4CC9 |
Title of publication | Single metal four-electron reduction by U(ii) and masked "U(ii)" compounds. |
Authors of publication | Modder, Dieuwertje K.; Palumbo, Chad T.; Douair, Iskander; Scopelliti, Rosario; Maron, Laurent; Mazzanti, Marinella |
Journal of publication | Chemical science |
Year of publication | 2021 |
Journal volume | 12 |
Journal issue | 17 |
Pages of publication | 6153 - 6158 |
a | 15.66789 ± 0.00014 Å |
b | 17.47136 ± 0.00016 Å |
c | 24.16489 ± 0.00019 Å |
α | 90° |
β | 93.6596 ± 0.0008° |
γ | 90° |
Cell volume | 6601.39 ± 0.1 Å3 |
Cell temperature | 140 ± 0.1 K |
Ambient diffraction temperature | 140 ± 0.1 K |
Number of distinct elements | 7 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/c 1 |
Hall space group symbol | -P 2ybc |
Residual factor for all reflections | 0.0306 |
Residual factor for significantly intense reflections | 0.0273 |
Weighted residual factors for significantly intense reflections | 0.0648 |
Weighted residual factors for all reflections included in the refinement | 0.0665 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.04 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 1.54184 Å |
Diffraction radiation type | CuKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/1563141.html
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