Information card for entry 1563484

Structure parameters

• Formula: Cu Ga0.82 In0.18 Se2
• Calculated formula: Cu Ga0.824 In0.176 Se2
• Title of publication: Structural investigation of the Cu2Se‒In2Se3‒Ga2Se3 phase diagram, X-ray photoemission and optical properties of the Cu1−z(In0.5Ga0.5)1+z/3Se2 compounds
• Authors of publication: Souilah, M.; Lafond, A.; Guillot-Deudon, C.; Harel, S.; Evain, M.
• Journal of publication: Journal of Solid State Chemistry
• Year of publication: 2010
• Journal volume: 183
• Journal issue: 10
• Pages of publication: 2274 - 2280
• a: 5.6501 ± 0.00005 Å
• b: 5.6501 ± 0.00005 Å
• c: 11.1486 ± 0.0002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 355.904 ± 0.008 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 4
• Space group number: 122
• Hermann-Mauguin space group symbol: I -4 2 d
• Hall space group symbol: I -4 2bw
• Residual factor for all reflections: 0.0957
• Residual factor for significantly intense reflections: 0.0457
• Weighted residual factors for significantly intense reflections: 0.1014
• Weighted residual factors for all reflections included in the refinement: 0.1215
• Goodness-of-fit parameter for significantly intense reflections: 1.68
• Goodness-of-fit parameter for all reflections included in the refinement: 1.46
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No