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Information card for entry 1564050
Preview
| Coordinates | 1564050.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C52 H55 N O10 P2 Ru2 Si2 |
|---|---|
| Calculated formula | C52 H55 N O10 P2 Ru2 Si2 |
| SMILES | [Ru]12([Ru]([P](c3ccccc3)(c3ccccc3)c3ccccc3)(C#[O])(C#[O])([O]=C(CO[Si](C)(C)C)O1)OC(CO[Si](C)(C)C)=[O]2)([P](c1ccccc1)(c1ccccc1)c1ccccc1)(C#[O])C#[O].CC#N |
| Title of publication | Encapsulating ruthenium in silica using a single source precursor: Differing outcomes for a cycloaddition reaction |
| Authors of publication | Barik, Chandan Kr; Ganguly, Rakesh; Garcia, Felipe; Leong, Weng Kee |
| Journal of publication | Inorganica Chimica Acta |
| Year of publication | 2020 |
| Journal volume | 512 |
| Pages of publication | 119833 |
| a | 10.5028 ± 0.0003 Å |
| b | 13.6946 ± 0.0004 Å |
| c | 20.5244 ± 0.0006 Å |
| α | 72.1988 ± 0.0016° |
| β | 85.7229 ± 0.0017° |
| γ | 71.1619 ± 0.0014° |
| Cell volume | 2659.21 ± 0.14 Å3 |
| Cell temperature | 103 ± 2 K |
| Ambient diffraction temperature | 103 ± 2 K |
| Number of distinct elements | 7 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.0477 |
| Residual factor for significantly intense reflections | 0.0336 |
| Weighted residual factors for significantly intense reflections | 0.0802 |
| Weighted residual factors for all reflections included in the refinement | 0.0885 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.058 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/1564050.html
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Users of the data should acknowledge the original authors of the
structural data.