Information card for entry 1568390
Formula |
Cu26 Ge6 S32 W2 |
Calculated formula |
Cu26.001 Ge6.00024 S32.0012 W2 |
Title of publication |
'High power factors of thermoelectric colusites Cu26T2Ge6S32 (T = Cr, Mo, W): toward functionalization of the conductive "Cu-S" network' |
Authors of publication |
Pavan Kumar, V.; Supka, A.R.; Lemoine, P.; Lebedev, O.I.; Raveau, B.; Suekuni, K.; Nassif, V.; Al Rahal Al Orabi, R.; Fornari, M.; Guilmeau, E. |
Journal of publication |
Advanced Energy Materials |
Year of publication |
2019 |
Journal volume |
9 |
Journal issue |
6 |
Pages of publication |
1803249 - 1803249 |
a |
10.6098 ± 0.0001 Å |
b |
10.6098 ± 0.0001 Å |
c |
10.6098 ± 0.0001 Å |
α |
90° |
β |
90° |
γ |
90° |
Cell volume |
1194.32 ± 0.019 Å3 |
Cell temperature |
293 ± 2 K |
Ambient diffraction temperature |
293 ± 2 K |
Number of distinct elements |
4 |
Space group number |
218 |
Hermann-Mauguin space group symbol |
P -4 3 n |
Hall space group symbol |
P -4n 2 3 |
Residual factor R(I) for significantly intense reflections |
2.7848 |
Method of determination |
powder diffraction |
Diffraction radiation wavelength |
1.59395 Å |
Diffraction radiation type |
ConstantWavelengthNeutronDiffraction |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
No |
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https://www.crystallography.net/1568390.html