Information card for entry 1568439

Structure parameters

• Formula: C40 H52 Ga P
• Calculated formula: C40 H52 Ga P
• Title of publication: Photochemical formation and reversible base-induced cleavage of a phosphagallene.
• Authors of publication: Taeufer, T.; Dankert, F.; Michalik, D.; Pospech, J.; Bresien, J.; Hering-Junghans, C
• Journal of publication: Chemical science
• Year of publication: 2023
• Journal volume: 14
• Journal issue: 11
• Pages of publication: 3018 - 3023
• a: 10.1214 ± 0.0002 Å
• b: 22.1032 ± 0.0005 Å
• c: 16.8012 ± 0.0004 Å
• α: 90°
• β: 106.045 ± 0.001°
• γ: 90°
• Cell volume: 3612.27 ± 0.14 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0416
• Residual factor for significantly intense reflections: 0.0344
• Weighted residual factors for significantly intense reflections: 0.0847
• Weighted residual factors for all reflections included in the refinement: 0.0902
• Goodness-of-fit parameter for all reflections included in the refinement: 1.028
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No