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Information card for entry 1568871
Preview
| Coordinates | 1568871.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C44 H64 Cl Ga Ge N4 |
|---|---|
| Calculated formula | C44 H64 Cl Ga Ge N4 |
| SMILES | [Ge]1([Ga]2(Cl)[N](c3c(cccc3C(C)C)C(C)C)=C(C)C=C(N2c2c(cccc2C(C)C)C(C)C)C)[N](C(C)(C)C)=C(N1C(C)(C)C)c1ccccc1 |
| Title of publication | Snapshots of sequential polyphosphide rearrangement upon metallatetrylene addition. |
| Authors of publication | Sun, Xiaofei; Hinz, Alexander; Schulz, Stephan; Zimmermann, Lisa; Scheer, Manfred; Roesky, Peter W. |
| Journal of publication | Chemical science |
| Year of publication | 2023 |
| Journal volume | 14 |
| Journal issue | 18 |
| Pages of publication | 4769 - 4776 |
| a | 10.233 ± 0.002 Å |
| b | 12.188 ± 0.002 Å |
| c | 18.128 ± 0.006 Å |
| α | 83.16 ± 0.02° |
| β | 75.84 ± 0.02° |
| γ | 74.802 ± 0.016° |
| Cell volume | 2111.9 ± 0.9 Å3 |
| Cell temperature | 100 K |
| Ambient diffraction temperature | 100 K |
| Number of distinct elements | 6 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.05 |
| Residual factor for significantly intense reflections | 0.043 |
| Weighted residual factors for significantly intense reflections | 0.1136 |
| Weighted residual factors for all reflections included in the refinement | 0.1192 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.053 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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The link is: https://www.crystallography.net/1568871.html
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Users of the data should acknowledge the original authors of the
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