Information card for entry 1570569

Structure parameters

• Formula: Dy2 O5 Si
• Calculated formula: Dy2 O5 Si
• Title of publication: Crystal Growth of the R2SiO5 Compounds (R = Dy, Ho, and Er) by the Floating Zone Method Using a Laser-Diode-Heated Furnace
• Authors of publication: Ciomaga Hatnean, Vasile Cristian; Pui, Aurel; Simonov, Arkadiy; Ciomaga Hatnean, Monica
• Journal of publication: Crystals
• Year of publication: 2023
• Journal volume: 13
• Journal issue: 12
• Pages of publication: 1687
• a: 10.4617 ± 0.0003 Å
• b: 6.74837 ± 0.00016 Å
• c: 12.5382 ± 0.0003 Å
• α: 90°
• β: 102.748 ± 0.003°
• γ: 90°
• Cell volume: 863.37 ± 0.04 ų
• Cell temperature: 293 K
• Ambient diffraction temperature: 293 K
• Number of distinct elements: 3
• Space group number: 15
• Hermann-Mauguin space group symbol: I 1 2/a 1
• Hall space group symbol: -I 2ya
• Residual factor for all reflections: 0.0338
• Residual factor for significantly intense reflections: 0.0277
• Weighted residual factors for significantly intense reflections: 0.0575
• Weighted residual factors for all reflections included in the refinement: 0.06
• Goodness-of-fit parameter for all reflections included in the refinement: 1.152
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No