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Information card for entry 1572140
Preview
Coordinates | 1572140.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C48 H34 N2 S |
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Calculated formula | C48 H34 N2 S |
Title of publication | Sulfur oxidation states manipulate excited state electronic configurations for constructing highly efficient organic type I photosensitizers. |
Authors of publication | Gong, Jianye; Wang, Xiaopeng; Zhang, Weijing; Wu, Yifan; Li, Kai; Sha, Renmanduhu; Liu, Lingxiu; Li, Chunbin; Feng, Lina; Jiang, Guoyu; Wang, Jianguo; Tang, Ben Zhong |
Journal of publication | Chemical science |
Year of publication | 2024 |
Journal volume | 15 |
Journal issue | 32 |
Pages of publication | 13001 - 13010 |
a | 14.2638 ± 0.001 Å |
b | 17.9124 ± 0.0012 Å |
c | 14.1231 ± 0.001 Å |
α | 90° |
β | 105.354 ± 0.008° |
γ | 90° |
Cell volume | 3479.6 ± 0.4 Å3 |
Cell temperature | 150 ± 0.1 K |
Ambient diffraction temperature | 150 ± 0.1 K |
Number of distinct elements | 4 |
Space group number | 15 |
Hermann-Mauguin space group symbol | C 1 2/c 1 |
Hall space group symbol | -C 2yc |
Residual factor for all reflections | 0.0548 |
Residual factor for significantly intense reflections | 0.0421 |
Weighted residual factors for significantly intense reflections | 0.0945 |
Weighted residual factors for all reflections included in the refinement | 0.1031 |
Goodness-of-fit parameter for all reflections included in the refinement | 1.027 |
Diffraction radiation probe | x-ray |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/1572140.html
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