Information card for entry 2001328
| Formula |
C20 H32 O2 Si4 |
| Calculated formula |
C20 H32 O2 Si4 |
| Title of publication |
Structure of cyclo-1,1',4,4'-bis(1,1,3,3-tetramethyl-1,3-disiloxanediyl)dibenzene |
| Authors of publication |
Abboud, K. A.; Smith, Jnr, D. W.; Wagener, K. B. |
| Journal of publication |
Acta Crystallographica Section C |
| Year of publication |
1993 |
| Journal volume |
49 |
| Journal issue |
10 |
| Pages of publication |
1845 - 1848 |
| a |
6.616 ± 0.001 Å |
| b |
8.661 ± 0.001 Å |
| c |
11.693 ± 0.001 Å |
| α |
77.79 ± 0.01° |
| β |
87.14 ± 0.01° |
| γ |
69.02 ± 0.01° |
| Cell volume |
611.21 ± 0.14 Å3 |
| Cell temperature |
293 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for significantly intense reflections |
0.0516 |
| Weighted residual factors for significantly intense reflections |
0.0655 |
| Goodness-of-fit parameter for significantly intense reflections |
2.25 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/2001328.html
