Information card for entry 2004364
| Chemical name |
1,2-Bis[penta(phenylthio)phenyl]ethane |
| Formula |
C74 H54 S10 |
| Calculated formula |
C74 H54 S10 |
| SMILES |
c1ccc(cc1)Sc1c(CCc2c(Sc3ccccc3)c(Sc3ccccc3)c(c(c2Sc2ccccc2)Sc2ccccc2)Sc2ccccc2)c(Sc2ccccc2)c(c(c1Sc1ccccc1)Sc1ccccc1)Sc1ccccc1 |
| Title of publication |
1,2-Bis[2,3,4,5,6-pentakis(phenylthio)phenyl]ethane |
| Authors of publication |
Henderson, R. K.; MacNicol, D. D.; Rowan, S. J. |
| Journal of publication |
Acta Crystallographica Section C |
| Year of publication |
1996 |
| Journal volume |
52 |
| Journal issue |
1 |
| Pages of publication |
210 - 212 |
| a |
12.0031 ± 0.001 Å |
| b |
19.527 ± 0.003 Å |
| c |
13.953 ± 0.002 Å |
| α |
90° |
| β |
102.3 ± 0.009° |
| γ |
90° |
| Cell volume |
3195.3 ± 0.7 Å3 |
| Cell temperature |
293 ± 2 K |
| Ambient diffraction temperature |
293 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.2186 |
| Residual factor for significantly intense reflections |
0.0609 |
| Weighted residual factors for all reflections |
0.1877 |
| Weighted residual factors for significantly intense reflections |
0.1296 |
| Goodness-of-fit parameter for all reflections |
0.998 |
| Goodness-of-fit parameter for significantly intense reflections |
1.136 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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