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Information card for entry 2004364
Preview
Coordinates | 2004364.cif |
---|---|
Original IUCr paper | HTML |
Chemical name | 1,2-Bis[penta(phenylthio)phenyl]ethane |
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Formula | C74 H54 S10 |
Calculated formula | C74 H54 S10 |
SMILES | c1ccc(cc1)Sc1c(CCc2c(Sc3ccccc3)c(Sc3ccccc3)c(c(c2Sc2ccccc2)Sc2ccccc2)Sc2ccccc2)c(Sc2ccccc2)c(c(c1Sc1ccccc1)Sc1ccccc1)Sc1ccccc1 |
Title of publication | 1,2-Bis[2,3,4,5,6-pentakis(phenylthio)phenyl]ethane |
Authors of publication | Henderson, R. K.; MacNicol, D. D.; Rowan, S. J. |
Journal of publication | Acta Crystallographica Section C |
Year of publication | 1996 |
Journal volume | 52 |
Journal issue | 1 |
Pages of publication | 210 - 212 |
a | 12.0031 ± 0.001 Å |
b | 19.527 ± 0.003 Å |
c | 13.953 ± 0.002 Å |
α | 90° |
β | 102.3 ± 0.009° |
γ | 90° |
Cell volume | 3195.3 ± 0.7 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 3 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.2186 |
Residual factor for significantly intense reflections | 0.0609 |
Weighted residual factors for all reflections | 0.1877 |
Weighted residual factors for significantly intense reflections | 0.1296 |
Goodness-of-fit parameter for all reflections | 0.998 |
Goodness-of-fit parameter for significantly intense reflections | 1.136 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/2004364.html
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