Information card for entry 2004646
| Formula |
C20 H22 N2 Ni O2 S4 |
| Calculated formula |
C20 H22 N2 Ni O2 S4 |
| Title of publication |
(2,9-Dimethyl-1,10-phenanthroline-<i>N</i>^1^,<i>N</i>^10^)bis(<i>O</i>-ethyl dithiocarbonato-<i>S</i>,<i>S</i>')nickel(II) |
| Authors of publication |
Guo, Y.-H.; Xue, Y.-Q.; Xiong, R.-G.; Zuo, J.-L.; You, X.-Z.; Huang, X.-Y. |
| Journal of publication |
Acta Crystallographica Section C |
| Year of publication |
1996 |
| Journal volume |
52 |
| Journal issue |
3 |
| Pages of publication |
523 - 525 |
| a |
17.344 ± 0.005 Å |
| b |
8.336 ± 0.005 Å |
| c |
18.206 ± 0.004 Å |
| α |
90° |
| β |
117.63 ± 0.01° |
| γ |
90° |
| Cell volume |
2332 ± 1.6 Å3 |
| Cell temperature |
296 K |
| Number of distinct elements |
6 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for significantly intense reflections |
0.053 |
| Weighted residual factors for significantly intense reflections |
0.069 |
| Goodness-of-fit parameter for significantly intense reflections |
1.78 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/2004646.html