Information card for entry 2004646
Formula |
C20 H22 N2 Ni O2 S4 |
Calculated formula |
C20 H22 N2 Ni O2 S4 |
Title of publication |
(2,9-Dimethyl-1,10-phenanthroline-<i>N</i>^1^,<i>N</i>^10^)bis(<i>O</i>-ethyl dithiocarbonato-<i>S</i>,<i>S</i>')nickel(II) |
Authors of publication |
Guo, Y.-H.; Xue, Y.-Q.; Xiong, R.-G.; Zuo, J.-L.; You, X.-Z.; Huang, X.-Y. |
Journal of publication |
Acta Crystallographica Section C |
Year of publication |
1996 |
Journal volume |
52 |
Journal issue |
3 |
Pages of publication |
523 - 525 |
a |
17.344 ± 0.005 Å |
b |
8.336 ± 0.005 Å |
c |
18.206 ± 0.004 Å |
α |
90° |
β |
117.63 ± 0.01° |
γ |
90° |
Cell volume |
2332 ± 1.6 Å3 |
Cell temperature |
296 K |
Number of distinct elements |
6 |
Space group number |
14 |
Hermann-Mauguin space group symbol |
P 1 21/c 1 |
Hall space group symbol |
-P 2ybc |
Residual factor for significantly intense reflections |
0.053 |
Weighted residual factors for significantly intense reflections |
0.069 |
Goodness-of-fit parameter for significantly intense reflections |
1.78 |
Diffraction radiation wavelength |
0.71073 Å |
Diffraction radiation type |
MoKα |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
No |
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The link is:
https://www.crystallography.net/2004646.html