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Information card for entry 2004785
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Coordinates | 2004785.cif |
---|---|
Original IUCr paper | HTML |
Chemical name | Dimethylbis(O-cyclohexyldithiocarbonato)tin(IV). |
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Formula | C16 H28 O2 S4 Sn |
Calculated formula | C16 H28 O2 S4 Sn |
SMILES | S=C(S[Sn](SC(OC1CCCCC1)=S)(C)C)OC1CCCCC1 |
Title of publication | Bis(<i>O</i>-cyclohexyl dithiocarbonato)dimethyltin(IV) |
Authors of publication | Mohamed-Ibrahim, M. I.; Khor, C.-K.; Fun, H.-K.; Sivakumar, K. |
Journal of publication | Acta Crystallographica Section C |
Year of publication | 1996 |
Journal volume | 52 |
Journal issue | 4 |
Pages of publication | 845 - 846 |
a | 10.224 ± 0.001 Å |
b | 21.514 ± 0.002 Å |
c | 10.23 ± 0.001 Å |
α | 90° |
β | 90° |
γ | 90° |
Cell volume | 2250.2 ± 0.4 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 5 |
Space group number | 62 |
Hermann-Mauguin space group symbol | P n m a |
Hall space group symbol | -P 2ac 2n |
Residual factor for all reflections | 0.0749 |
Residual factor for significantly intense reflections | 0.0668 |
Weighted residual factors for all reflections | 0.1605 |
Weighted residual factors for significantly intense reflections | 0.1577 |
Goodness-of-fit parameter for all reflections | 1.157 |
Goodness-of-fit parameter for significantly intense reflections | 1.245 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
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The link is: https://www.crystallography.net/2004785.html
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