Information card for entry 2005214
| Chemical name |
Bis(μ-thiosulphato-S,O)-bis(dimethylphenanthrolyne cadmium(II)) |
| Formula |
C28 H24 Cd2 N4 O6 S4 |
| Calculated formula |
C28 H24 Cd2 N4 O6 S4 |
| Title of publication |
Bis(μ-thiosulfato)-1κ<i>O</i>,1:2κ^2^<i>S</i>;2κ<i>O</i>,1:2κ^2^<i>S</i>-bis[(2,9-dimethyl-1,10-phenanthroline-<i>N</i>,<i>N</i>')cadmium(II)] |
| Authors of publication |
Baggio, R.; Baggio, S.; Pardo, M. I.; Garland, M. T. |
| Journal of publication |
Acta Crystallographica Section C |
| Year of publication |
1996 |
| Journal volume |
52 |
| Journal issue |
8 |
| Pages of publication |
1939 - 1942 |
| a |
8.439 ± 0.001 Å |
| b |
16.864 ± 0.002 Å |
| c |
11.01 ± 0.001 Å |
| α |
90° |
| β |
109.56 ± 0.01° |
| γ |
90° |
| Cell volume |
1476.5 ± 0.3 Å3 |
| Cell temperature |
293 ± 2 K |
| Ambient diffraction temperature |
293 ± 2 K |
| Number of distinct elements |
6 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.0311 |
| Residual factor for significantly intense reflections |
0.0252 |
| Weighted residual factors for all reflections |
0.0638 |
| Weighted residual factors for significantly intense reflections |
0.0591 |
| Goodness-of-fit parameter for all reflections |
1.056 |
| Goodness-of-fit parameter for significantly intense reflections |
1.067 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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