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Information card for entry 2009472
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Coordinates | 2009472.cif |
---|---|
Original IUCr paper | HTML |
Chemical name | tetrakis(dimethyl sulfoxide)di-μ-fluoro-hexafluorodizirconium(IV) |
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Formula | C8 H24 F8 O4 S4 Zr2 |
Calculated formula | C4 H12 F4 O2 S2 Zr |
SMILES | F[Zr]1(F)([O]=S(C)C)([F][Zr]([F]1)(F)(F)(F)([O]=S(C)C)[O]=S(C)C)(F)[O]=S(C)C |
Title of publication | Di-μ-fluoro-bis[bis(dimethyl sulfoxide)trifluorozirconium(IV)] |
Authors of publication | Alcock, Nathaniel W.; Errington, William; Golby, Sarah L.; Patterson, Siobhan M.C.; Wallbridge, Malcolm G.H. |
Journal of publication | Acta Crystallographica Section C |
Year of publication | 1994 |
Journal volume | 50 |
Journal issue | 2 |
Pages of publication | 226 - 227 |
a | 8.831 ± 0.002 Å |
b | 11.955 ± 0.002 Å |
c | 10.834 ± 0.002 Å |
α | 90° |
β | 108.12 ± 0.03° |
γ | 90° |
Cell volume | 1087.1 ± 0.4 Å3 |
Cell temperature | 293 ± 2 K |
Ambient diffraction temperature | 293 ± 2 K |
Number of distinct elements | 6 |
Space group number | 14 |
Hermann-Mauguin space group symbol | P 1 21/n 1 |
Hall space group symbol | -P 2yn |
Residual factor for all reflections | 0.0661 |
Residual factor for significantly intense reflections | 0.0527 |
Weighted residual factors for all reflections | 0.1497 |
Weighted residual factors for significantly intense reflections | 0.1497 |
Goodness-of-fit parameter for all reflections | 1.07 |
Goodness-of-fit parameter for significantly intense reflections | 1.068 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/2009472.html
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