Information card for entry 2009646

Structure parameters

• Formula: Ga Li O6 Si2
• Calculated formula: Ga Li O6 Si2
• Title of publication: LiGaSi~2~O~6~
• Authors of publication: Sato, A.; Osawa, T.; Ohashi, H.
• Journal of publication: Acta Crystallographica Section C
• Year of publication: 1994
• Journal volume: 50
• Journal issue: 4
• Pages of publication: 487 - 488
• a: 9.561 ± 0.001 Å
• b: 8.569 ± 0.001 Å
• c: 5.268 ± 0.001 Å
• α: 90°
• β: 110.244 ± 0.003°
• γ: 90°
• Cell volume: 404.94 ± 0.1 ų
• Cell temperature: 298 K
• Number of distinct elements: 4
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for significantly intense reflections: 0.017
• Weighted residual factors for significantly intense reflections: 0.038
• Goodness-of-fit parameter for significantly intense reflections: 1.7
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No