Information card for entry 2009813

Structure parameters

• Formula: C52 H66 Nb2 O2 Si4
• Calculated formula: C52 H66 Nb2 O2 Si4
• Title of publication: [Nb(CH~2~SiMe~3~)(OC~6~H~3~Ph~2~-2,6)(μ-CSiMe~3~)]~2~
• Authors of publication: Torrez, E.; Profilet, R. D.; Fanwick, P. E.; Rothwell, I. P.
• Journal of publication: Acta Crystallographica Section C
• Year of publication: 1994
• Journal volume: 50
• Journal issue: 6
• Pages of publication: 902 - 904
• a: 11.785 ± 0.004 Å
• b: 19.408 ± 0.002 Å
• c: 12.476 ± 0.006 Å
• α: 90°
• β: 112.7 ± 0.02°
• γ: 90°
• Cell volume: 2632.5 ± 1.6 ų
• Cell temperature: 293 K
• Number of distinct elements: 5
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for significantly intense reflections: 0.035
• Weighted residual factors for significantly intense reflections: 0.041
• Goodness-of-fit parameter for significantly intense reflections: 1.225
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No