Information card for entry 2009876

Structure parameters

• Formula: C10 H8 N2 O3 S2 V
• Calculated formula: C10 H8 N2 O3 S2 V
• Title of publication: Oxobis(<i>N</i>-oxopyridine-2-thiolato-<i>N</i>,<i>O</i>)vanadium(IV)
• Authors of publication: Higes-Rolando, F.J.; Perez-Florindo, A.; Valenzuela-Calahorro, C.; Martin-Ramos, J.D.; Romero-Garzon, J.
• Journal of publication: Acta Crystallographica Section C
• Year of publication: 1994
• Journal volume: 50
• Journal issue: 7
• Pages of publication: 1049 - 1052
• a: 11.227 ± 0.002 Å
• b: 14.155 ± 0.005 Å
• c: 15.476 ± 0.003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 2459.4 ± 1.1 ų
• Cell temperature: 293 ± 3 K
• Number of distinct elements: 6
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for significantly intense reflections: 0.054
• Weighted residual factors for significantly intense reflections: 0.03
• Goodness-of-fit parameter for significantly intense reflections: 1.54
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No