Information card for entry 2012048
Formula |
C40 H36 N2 Ni O4 P2 S4 |
Calculated formula |
C40 H36 N2 Ni O4 P2 S4 |
SMILES |
[Ni]123(SP(=[S]1)(Oc1ccc(cc1)C)Oc1ccc(cc1)C)(SP(=[S]2)(Oc1ccc(cc1)C)Oc1ccc(cc1)C)[n]1cccc2ccc4ccc[n]3c4c12 |
Title of publication |
Bis(<i>O</i>,<i>O</i>'-di-<i>p</i>-tolyldithiophosphato-<i>S</i>,<i>S</i>')(1,10-phenanthroline-<i>N</i>,<i>N</i>')nickel(II) |
Authors of publication |
Hao, Qingli; Fun, Hoong-Kun; Chantrapromma, Suchada; Razak, Ibrahim Abdul; Jian, Fangfang; Yang, Xujie; Lu, Lude; Wang, Xin |
Journal of publication |
Acta Crystallographica Section C |
Year of publication |
2001 |
Journal volume |
57 |
Journal issue |
6 |
Pages of publication |
717 - 718 |
a |
11.1819 ± 0.0002 Å |
b |
12.0934 ± 0.0002 Å |
c |
17.286 ± 0.0002 Å |
α |
107.693 ± 0.001° |
β |
96.349 ± 0.001° |
γ |
109.896 ± 0.001° |
Cell volume |
2033.41 ± 0.06 Å3 |
Cell temperature |
293 ± 2 K |
Ambient diffraction temperature |
293 ± 2 K |
Number of distinct elements |
7 |
Space group number |
2 |
Hermann-Mauguin space group symbol |
P -1 |
Hall space group symbol |
-P 1 |
Residual factor for all reflections |
0.0663 |
Residual factor for significantly intense reflections |
0.0482 |
Weighted residual factors for all reflections included in the refinement |
0.1198 |
Goodness-of-fit parameter for all reflections included in the refinement |
0.927 |
Diffraction radiation wavelength |
0.71073 Å |
Diffraction radiation type |
MoKα |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
Yes |
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