Information card for entry 2017430

Structure parameters

• Chemical name: Tetrakis(μ-triisopropylsilanethiolato)-\ 1:2κ^4^<i>S</i>:<i>S</i>;2:3κ^4^<i>S</i>:<i>S</i>-\ bis(triisopropylsilanethiolato)-1κ<i>S</i>,3κ<i>S</i>-trizinc(II)
• Formula: C54 H126 S6 Si6 Zn3
• Calculated formula: C54 H126 S6 Si6 Zn3
• Title of publication: Tetrakis(μ-triisopropylsilanethiolato)-1:2κ^4^<i>S</i>:<i>S</i>;2:3κ^4^<i>S</i>:<i>S</i>-bis(triisopropylsilanethiolato)-1κ<i>S</i>,3κ<i>S</i>-trizinc(II)
• Authors of publication: Medina-Ramírez, Iliana E.; Fink, Mark J.; Donahue, James P.
• Journal of publication: Acta Crystallographica Section C
• Year of publication: 2009
• Journal volume: 65
• Journal issue: 12
• Pages of publication: m475 - m477
• a: 15.179 ± 0.007 Å
• b: 13.746 ± 0.006 Å
• c: 36.18 ± 0.016 Å
• α: 90°
• β: 101.564 ± 0.007°
• γ: 90°
• Cell volume: 7396 ± 6 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for all reflections: 0.0587
• Residual factor for significantly intense reflections: 0.0518
• Weighted residual factors for significantly intense reflections: 0.1093
• Weighted residual factors for all reflections included in the refinement: 0.1111
• Goodness-of-fit parameter for all reflections included in the refinement: 1.282
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: Yes