Information card for entry 2102550

Structure parameters

• Common name: β silicon nitride
• Formula: N4 Si3
• Calculated formula: N4 Si3
• Title of publication: Synchrotron X-ray and <i>ab initio</i> studies of β-Si~3~N~4~
• Authors of publication: du Boulay, D.; Ishizawa, N.; Atake, T.; Streltsov, V.; Furuya, K.; Munakata, F.
• Journal of publication: Acta Crystallographica Section B
• Year of publication: 2004
• Journal volume: 60
• Journal issue: 4
• Pages of publication: 388 - 405
• a: 7.6044 ± 0.0001 Å
• b: 7.6044 ± 0.0001 Å
• c: 2.9063 ± 0.0001 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 145.546 ± 0.006 ų
• Cell temperature: 295 K
• Ambient diffraction temperature: 295 K
• Number of distinct elements: 2
• Space group number: 176
• Hermann-Mauguin space group symbol: P 63/m
• Hall space group symbol: -P 6c
• Residual factor for all reflections: 0.0196
• Residual factor for significantly intense reflections: 0.0196
• Weighted residual factors for all reflections: 0.0146
• Weighted residual factors for all reflections included in the refinement: 0.0146
• Goodness-of-fit parameter for all reflections: 2.0102
• Goodness-of-fit parameter for all reflections included in the refinement: 2.0102
• Diffraction radiation wavelength: 0.75022 Å
• Diffraction radiation type: synx
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No