Information card for entry 2200064

Structure parameters

• Chemical name: Di(N-cyclohexyl-N-ethyldithiocarbamato)lead(II)
• Formula: C18 H32 N2 Pb S4
• Calculated formula: C18 H32 N2 Pb S4
• SMILES: C1(N(CC)C2CCCCC2)=[S][Pb]2(S1)[S]=C(N(C1CCCCC1)CC)S2
• Title of publication: Bis(<i>N</i>-cyclohexyl-<i>N</i>-ethyldithiocarbamato-<i>S</i>,<i>S</i>')lead(II)
• Authors of publication: Baba, Ibrahim; Farina, Yang; Othman, A. Hamid; Razak, Ibrahim Abdul; Fun, Hoong-Kun; Ng, Seik Weng
• Journal of publication: Acta Crystallographica Section E
• Year of publication: 2001
• Journal volume: 57
• Journal issue: 1
• Pages of publication: m35 - m36
• a: 9.718 ± 0.0002 Å
• b: 10.1871 ± 0.0002 Å
• c: 11.8751 ± 0.0003 Å
• α: 95.586 ± 0.001°
• β: 92.978 ± 0.001°
• γ: 99.142 ± 0.001°
• Cell volume: 1152.45 ± 0.04 ų
• Cell temperature: 298 ± 2 K
• Ambient diffraction temperature: 298 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.108
• Residual factor for significantly intense reflections: 0.053
• Weighted residual factors for all reflections included in the refinement: 0.146
• Goodness-of-fit parameter for all reflections included in the refinement: 0.991
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: Yes