Information card for entry 2200068
| Chemical name |
Bis[N,N-bis(2-hydroxyethyl)dithiocarbamato-S,S']diphenyltin(IV) |
| Formula |
C22 H30 N2 O4 S4 Sn |
| Calculated formula |
C22 H30 N2 O4 S4 Sn |
| SMILES |
[Sn](SC(=S)N(CCO)CCO)(SC(=S)N(CCO)CCO)(c1ccccc1)c1ccccc1 |
| Title of publication |
Bis[<i>N</i>,<i>N</i>-bis(2-hydroxyethyl)dithiocarbamato-<i>S</i>,<i>S</i>']diphenyltin(IV) |
| Authors of publication |
Farina, Yang; Baba, Ibrahim; Othman, A. Hamid; Ibrahim Abdul Razak; Fun, Hoong-Kun; Ng, Seik Weng |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2001 |
| Journal volume |
57 |
| Journal issue |
1 |
| Pages of publication |
m46 - m47 |
| a |
9.0118 ± 0.0002 Å |
| b |
12.4051 ± 0.0001 Å |
| c |
12.6024 ± 0.0002 Å |
| α |
86.889 ± 0.001° |
| β |
69.575 ± 0.001° |
| γ |
88.293 ± 0.001° |
| Cell volume |
1318.24 ± 0.04 Å3 |
| Cell temperature |
298 ± 2 K |
| Ambient diffraction temperature |
298 ± 2 K |
| Number of distinct elements |
6 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.058 |
| Residual factor for significantly intense reflections |
0.048 |
| Weighted residual factors for all reflections included in the refinement |
0.112 |
| Goodness-of-fit parameter for all reflections included in the refinement |
0.98 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/2200068.html